Simulation of the potential distribution in an inhomogeneously doped workspace of a double-gate SOI CMOS nanotransistor

Simulation of the potential distribution in an inhomogeneously doped workspace of a double-gate... One possible approach to the analytical solution of the 2D Poisson equation for potential in the workspace of a double-gate CMOS nanotransistor with a silicon-on-insulator structure with an inhomogeneously doped workspace as a Gaussian function is discussed. Based on the numerical solutions of the Poisson equation, the dependences of a number of major doping electrophysical characteristics, such as the potential distribution in the workspace, threshold voltage, and subthreshold current under different technological parameters on the dopant profile, are analyzed. For the selected topological standards, the optimization of the dopant profile parameters gives an additional opportunity to control the main characteristics, along with the thickness of the workspace and the thickness of the gated oxide of the front shutter, which is important in the analysis of the applicability of nanotransistor structures. The physical limitations to optimize the electrophysical characteristics, and in particular, the effective suppression of the short channel effects, are considered. The simulation results are in good accordance with the modeled data obtained using a commercially available for 2D simulation of the transistor structures ATLASTM software package. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Simulation of the potential distribution in an inhomogeneously doped workspace of a double-gate SOI CMOS nanotransistor

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Publisher
Pleiades Publishing
Copyright
Copyright © 2017 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739717010061
Publisher site
See Article on Publisher Site

Abstract

One possible approach to the analytical solution of the 2D Poisson equation for potential in the workspace of a double-gate CMOS nanotransistor with a silicon-on-insulator structure with an inhomogeneously doped workspace as a Gaussian function is discussed. Based on the numerical solutions of the Poisson equation, the dependences of a number of major doping electrophysical characteristics, such as the potential distribution in the workspace, threshold voltage, and subthreshold current under different technological parameters on the dopant profile, are analyzed. For the selected topological standards, the optimization of the dopant profile parameters gives an additional opportunity to control the main characteristics, along with the thickness of the workspace and the thickness of the gated oxide of the front shutter, which is important in the analysis of the applicability of nanotransistor structures. The physical limitations to optimize the electrophysical characteristics, and in particular, the effective suppression of the short channel effects, are considered. The simulation results are in good accordance with the modeled data obtained using a commercially available for 2D simulation of the transistor structures ATLASTM software package.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 23, 2017

References

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