Simulation of the local effect of nuclear particles on 65-nm CMOS elements of two-phase logics

Simulation of the local effect of nuclear particles on 65-nm CMOS elements of two-phase logics The influence of capacitive couplings of the buses connecting differential parts of two-phase CMOS logic elements with a 65-nm design rule on the failure sensitivity of elements due to the effect of separate nuclear particles is simulated. The sensitivity characteristics of two-phase inverters, NAND elements, trigger cells, and controlling elements of RS and D triggers is determined. The effects of the separate nuclear particle were simulated by current pulses with the rise time constant of 10 ps and fall time constants of 30 ps and 300 ps. The admissible values of capacitances of inputs of differential parts of two-phase CMOS logic elements of 0.3...0.7 fF are established depending on the element type and its logic state. The critical charges for two-phase logic elements are 32–88 fC, which is better by a factor of 10–15 than for elements with the conventional CMOS circuit technology with the same 65-nm design rule. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Simulation of the local effect of nuclear particles on 65-nm CMOS elements of two-phase logics

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712040099
Publisher site
See Article on Publisher Site

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