Simulation of the local effect of nuclear particles on 65-nm CMOS DICE memory cells

Simulation of the local effect of nuclear particles on 65-nm CMOS DICE memory cells Sensitivity characteristics of the DICE CMOS memory cells as two-phase D triggers with the 65-nm design rule. The dependences of critical values of the amplitudes of current pulses causing the failures during recording and storing the data are determined for various coupling capacitances of differential inputs of two-phase inverters in the composition of the memory cell. The following limitations for the values of these capacitances are established: 0.4–0.5 fF for memory cells based on NMOS transistors with a channel width of 400 nm and 0.2–0.3 fF for NMOS transistors with a channel width of 120 nm. Evaluations of critical integral charges that characterize the failure tolerance under the effect of separate nuclear particles give correspondingly values of 25–20 fC, which is larger by a factor of 8 compared with the 6-transistor CMOS memory cells. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Simulation of the local effect of nuclear particles on 65-nm CMOS DICE memory cells

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712040117
Publisher site
See Article on Publisher Site

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