Simulation of the effects of deep grooving in silicon in the plasmochemical cyclic process

Simulation of the effects of deep grooving in silicon in the plasmochemical cyclic process The results of computer simulation of the effects of the formation of deep groove profiles in silicon during the cyclic etching-passivating process in SF6/C4F8 plasma are reported. It is shown that the groove profile varies under variations in one of the basic parameters of the process, the etching-passivation time ratio at different probabilities of the reactions of etching and the deposition of a fluorocarbon film. The sensitivity of the model to these parameters is determined. Grooves with different tilt angles of walls are simulated, and the opportunity for controlling the groove profile by varying the parameters during grooving is shown. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Simulation of the effects of deep grooving in silicon in the plasmochemical cyclic process

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2009 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739709060031
Publisher site
See Article on Publisher Site

Abstract

The results of computer simulation of the effects of the formation of deep groove profiles in silicon during the cyclic etching-passivating process in SF6/C4F8 plasma are reported. It is shown that the groove profile varies under variations in one of the basic parameters of the process, the etching-passivation time ratio at different probabilities of the reactions of etching and the deposition of a fluorocarbon film. The sensitivity of the model to these parameters is determined. Grooves with different tilt angles of walls are simulated, and the opportunity for controlling the groove profile by varying the parameters during grooving is shown.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 15, 2009

References

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