The results of computer simulation of the effects of the formation of deep groove profiles in silicon during the cyclic etching-passivating process in SF6/C4F8 plasma are reported. It is shown that the groove profile varies under variations in one of the basic parameters of the process, the etching-passivation time ratio at different probabilities of the reactions of etching and the deposition of a fluorocarbon film. The sensitivity of the model to these parameters is determined. Grooves with different tilt angles of walls are simulated, and the opportunity for controlling the groove profile by varying the parameters during grooving is shown.
Russian Microelectronics – Springer Journals
Published: Nov 15, 2009
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