Simulation of properties of the channels of silicon MOS transistors on the deforming germanium substrate

Simulation of properties of the channels of silicon MOS transistors on the deforming germanium... The influence of tension deformation on the electrical parameters of semiconductor films of crystalline silicon is considered. The influence of the ratio of thicknesses of the film and deforming germanium substrate on the shift of energy bands and variation in the mobility of free charge carriers is taken into account. The dependence of resistance of the strained anisotropic n-channel of the field-effect transistor on the size of current contacts and the value of the deformation is obtained and analyzed. It is shown that resistance of the strained silicon channel of the field-effect transistor in the open state is determined not only by its sizes and electrical parameters but also by the thickness of the deforming substrate and by the sizes of current contacts. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Simulation of properties of the channels of silicon MOS transistors on the deforming germanium substrate

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739710040025
Publisher site
See Article on Publisher Site

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