Simulation of properties of the channels of silicon MOS transistors on the deforming germanium substrate

Simulation of properties of the channels of silicon MOS transistors on the deforming germanium... The influence of tension deformation on the electrical parameters of semiconductor films of crystalline silicon is considered. The influence of the ratio of thicknesses of the film and deforming germanium substrate on the shift of energy bands and variation in the mobility of free charge carriers is taken into account. The dependence of resistance of the strained anisotropic n-channel of the field-effect transistor on the size of current contacts and the value of the deformation is obtained and analyzed. It is shown that resistance of the strained silicon channel of the field-effect transistor in the open state is determined not only by its sizes and electrical parameters but also by the thickness of the deforming substrate and by the sizes of current contacts. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Simulation of properties of the channels of silicon MOS transistors on the deforming germanium substrate

Loading next page...
 
/lp/springer_journal/simulation-of-properties-of-the-channels-of-silicon-mos-transistors-on-TAiPuBUzo3
Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739710040025
Publisher site
See Article on Publisher Site

Abstract

The influence of tension deformation on the electrical parameters of semiconductor films of crystalline silicon is considered. The influence of the ratio of thicknesses of the film and deforming germanium substrate on the shift of energy bands and variation in the mobility of free charge carriers is taken into account. The dependence of resistance of the strained anisotropic n-channel of the field-effect transistor on the size of current contacts and the value of the deformation is obtained and analyzed. It is shown that resistance of the strained silicon channel of the field-effect transistor in the open state is determined not only by its sizes and electrical parameters but also by the thickness of the deforming substrate and by the sizes of current contacts.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 21, 2010

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off