A theoretical model for nonuniform bulk precipitation is suggested. It can be used for describing internal gettering and providing better insight into SOI-related processes. Oxygen precipitation is shown to be a diffusion-limited process. The size of oxygen precipitates as a function of temperature and annealing time, as well as the thickness of a defect-free zone at the surface, were determined. A test for the optimization of SOI layers resulted from postimplantation annealing is suggested.
Russian Microelectronics – Springer Journals
Published: Dec 4, 2007
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