Simulation of oxygen precipitation in silicon

Simulation of oxygen precipitation in silicon A theoretical model for nonuniform bulk precipitation is suggested. It can be used for describing internal gettering and providing better insight into SOI-related processes. Oxygen precipitation is shown to be a diffusion-limited process. The size of oxygen precipitates as a function of temperature and annealing time, as well as the thickness of a defect-free zone at the surface, were determined. A test for the optimization of SOI layers resulted from postimplantation annealing is suggested. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Simulation of oxygen precipitation in silicon

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2000 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electronic and Computer Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/BF02773263
Publisher site
See Article on Publisher Site

References

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