A new mathematical model for the calculation of the implant distribution function in a solid is suggested. The case when low-transferred-energy ion collisions prevail is considered. The model exploits the reverse Fokker-Planck equation, which is derived from the Boltzmann transfer equation by approximating the collision integral with a differential operator. Algorithms for numerically solving the boundary-value problem for the Fokker-Planck equation are implemented. Obtained results are compared with the Monte-Carlo simulation of the implant concentration distribution for the case of high-energy boron implantation into silicon.
Russian Microelectronics – Springer Journals
Published: Dec 4, 2007
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