The method of the implementation of built-in protection of bipolar transistors from the current overloads in the controlling circuit based on the combination of an element with an N-shaped IVC with the bipolar transistor is considered. The use of the given method makes it possible to create semiconductor structures of bipolar transistors with built-in protection against current overloads in the controlling circuit.
Russian Microelectronics – Springer Journals
Published: Dec 4, 2011
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