Device-and-process simulation of the response exhibited by SOS CMOS building blocks to pulsed ionizing irradiation is considered. Computer and laser simulations are conducted. For dose-rate effects, energetically optimal simulation wavelengths are found to range from 0.75 to 0.90 μm.
Russian Microelectronics – Springer Journals
Published: Jan 18, 2011
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud