Simulating single-event effects associated with high-energy neutrons for different VLSI technologies

Simulating single-event effects associated with high-energy neutrons for different VLSI technologies A computer and a physical simulation are conducted of single-event effects associated with neutrons or protons of different energy for test VLSI circuits realized by modern technologies with a minimum feature size of 0.5 or 0.35 μm. The test specimens are found to be fairly susceptible to these effects. In particular, neutrons with an energy of order 1 MeV are shown to mainly cause single-event upsets with a threshold energy of about 1 MeV and a sensitive volume of order 1 μm3. As the minimum feature size is reduced, the threshold is predicted to decrease sharply due to a growing amplifying effect of the parasitic bipolar transistor. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Simulating single-event effects associated with high-energy neutrons for different VLSI technologies

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2008 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373970801006X
Publisher site
See Article on Publisher Site

Abstract

A computer and a physical simulation are conducted of single-event effects associated with neutrons or protons of different energy for test VLSI circuits realized by modern technologies with a minimum feature size of 0.5 or 0.35 μm. The test specimens are found to be fairly susceptible to these effects. In particular, neutrons with an energy of order 1 MeV are shown to mainly cause single-event upsets with a threshold energy of about 1 MeV and a sensitive volume of order 1 μm3. As the minimum feature size is reduced, the threshold is predicted to decrease sharply due to a growing amplifying effect of the parasitic bipolar transistor.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 18, 2011

References

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