Silicon-Surface Restructuring under Cleaning as a Method for Improving Al/Mo-to-Si Contact Resistance and Microwave-BJT Parameters

Silicon-Surface Restructuring under Cleaning as a Method for Improving Al/Mo-to-Si Contact... For microwave BJTs, the influence is experimentally studied of different surface-cleaning processes on the Al/Mo-to-Si contact resistance and BJT parameters. Two processes are identified as optimal. One of them includes preliminary H2O2–NH4OH–H2O treatment, vacuum furnace annealing, H2O2–NH4OH–H2O cleaning, and treatment with 1% hydrofluoric acid. The other includes rapid light annealing followed by treatment with 1% hydrofluoric acid. It is concluded that the resultant silicon-surface restructuring provides a lower contact resistance, more intimate metal–semiconductor contact, and better BJT parameter values. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Silicon-Surface Restructuring under Cleaning as a Method for Improving Al/Mo-to-Si Contact Resistance and Microwave-BJT Parameters

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2004 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/B:RUMI.0000043046.58184.c5
Publisher site
See Article on Publisher Site

Abstract

For microwave BJTs, the influence is experimentally studied of different surface-cleaning processes on the Al/Mo-to-Si contact resistance and BJT parameters. Two processes are identified as optimal. One of them includes preliminary H2O2–NH4OH–H2O treatment, vacuum furnace annealing, H2O2–NH4OH–H2O cleaning, and treatment with 1% hydrofluoric acid. The other includes rapid light annealing followed by treatment with 1% hydrofluoric acid. It is concluded that the resultant silicon-surface restructuring provides a lower contact resistance, more intimate metal–semiconductor contact, and better BJT parameter values.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 19, 2004

References

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