Silicon wafer cleaning by wet etching in model equipment meeting requirements for a closed manufacturing system is considered. Theoretical grounds for the new production technology, including chemical treatment, rinsing in water, and drying in a single process, are discussed. It is shown that the cleaning efficiency is improved if a heated gas (such as nitrogen) passes through the etchant, causing the wafers to vibrate, rotate in the horizontal plane, or reciprocate in the vertical plane. Also, the heated gas exerts a cavitation effect on the wafer surface. The degree of surface contamination after chemical etching, rinsing, and drying is reported.
Russian Microelectronics – Springer Journals
Published: Aug 1, 2014
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