Silicon Surface Cleaning by Wet Etching for IC Production in a Closed Manufacturing System

Silicon Surface Cleaning by Wet Etching for IC Production in a Closed Manufacturing System Silicon wafer cleaning by wet etching in model equipment meeting requirements for a closed manufacturing system is considered. Theoretical grounds for the new production technology, including chemical treatment, rinsing in water, and drying in a single process, are discussed. It is shown that the cleaning efficiency is improved if a heated gas (such as nitrogen) passes through the etchant, causing the wafers to vibrate, rotate in the horizontal plane, or reciprocate in the vertical plane. Also, the heated gas exerts a cavitation effect on the wafer surface. The degree of surface contamination after chemical etching, rinsing, and drying is reported. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Silicon Surface Cleaning by Wet Etching for IC Production in a Closed Manufacturing System

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Publisher
Springer-Verlag
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1011318811003
Publisher site
See Article on Publisher Site

Abstract

Silicon wafer cleaning by wet etching in model equipment meeting requirements for a closed manufacturing system is considered. Theoretical grounds for the new production technology, including chemical treatment, rinsing in water, and drying in a single process, are discussed. It is shown that the cleaning efficiency is improved if a heated gas (such as nitrogen) passes through the etchant, causing the wafers to vibrate, rotate in the horizontal plane, or reciprocate in the vertical plane. Also, the heated gas exerts a cavitation effect on the wafer surface. The degree of surface contamination after chemical etching, rinsing, and drying is reported.

Journal

Russian MicroelectronicsSpringer Journals

Published: Aug 1, 2014

References

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