Silicon nanowire field effect transistor made of silicon-on-insulator

Silicon nanowire field effect transistor made of silicon-on-insulator In this study, a fabrication technique and the results of the investigation of a silicon nanowire-based field effect transistor (Si NWFET) that can be the backbone for the fabrication of a high-sensitivity field and charge sensor with nanoscale spatial resolution for uses in different branches of physics, biology and medicine, are presented. The NWFET was fabricated of silicon-on-insulator (SOI) material by electron-beam lithography and reactive ion etching. Special care was taken of the electrical insulation of lead-in (metal) contact wires to the drain and source of the transistor, both for a reduction in the current of the leak-age to the underlying silicon wafer and for preventing contact with a conducting medium during experiments in a liquid. The measurements of the transistor in wet solutions of various pH demonstrate the possibility of using such a SiNWFET as an ultrasensitive field/charging sensor. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Silicon nanowire field effect transistor made of silicon-on-insulator

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712050034
Publisher site
See Article on Publisher Site

Abstract

In this study, a fabrication technique and the results of the investigation of a silicon nanowire-based field effect transistor (Si NWFET) that can be the backbone for the fabrication of a high-sensitivity field and charge sensor with nanoscale spatial resolution for uses in different branches of physics, biology and medicine, are presented. The NWFET was fabricated of silicon-on-insulator (SOI) material by electron-beam lithography and reactive ion etching. Special care was taken of the electrical insulation of lead-in (metal) contact wires to the drain and source of the transistor, both for a reduction in the current of the leak-age to the underlying silicon wafer and for preventing contact with a conducting medium during experiments in a liquid. The measurements of the transistor in wet solutions of various pH demonstrate the possibility of using such a SiNWFET as an ultrasensitive field/charging sensor.

Journal

Russian MicroelectronicsSpringer Journals

Published: Sep 4, 2012

References

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