Silicon multiplexers for 1 × 576 HgCdTe IR focal-plane arrays

Silicon multiplexers for 1 × 576 HgCdTe IR focal-plane arrays Two versions of silicon 1D multiplexer for 1 × 576 IR focal-plane arrays are designed, fabricated, and tested. The version LM-1 employs a direct-injection input circuit; the version LM-2 contains a buffered direct-injection circuit. They are intended for use with HgCdTe n +-p photodiodes operating in the wavelength ranges 8–14 and 3–5 μm, the minimum reverse diode resistance being 200 kΩ. The multiplexers ensure high uniformity of photodiode bias voltage; they are provided with a switched storage capacitance, which allows operation at different signal, background, and dark currents. Clocked at 3.5 MHz, they have an integration time of 40 μs and can read out 25 full-size (768 × 576) frames per second. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Silicon multiplexers for 1 × 576 HgCdTe IR focal-plane arrays

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2008 by MAIK Nauka
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739708040057
Publisher site
See Article on Publisher Site

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