It is demonstrated by experiment that active IR imaging can be used to detect internal inhomogeneities in silicon ingots, the IR illuminator being any uniformly heated body. The method proposed is conceptually the same as visual inspection of optical materials. It does not require any special preparation of ingots. It is concluded that the simplicity of the method should make it convenient for the quality control of major semiconductor materials under production conditions.
Russian Microelectronics – Springer Journals
Published: Nov 19, 2004
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