Silicon-based nanostructures formed by plasma etching through a mask formed by a focused beam of Ga+ ions

Silicon-based nanostructures formed by plasma etching through a mask formed by a focused beam of... A method of formation of three-dimensional silicon-based nanostructures by a mask formation with the use of focused ion beam, for following plasma etching, is presented. A surface relief pattern, with depths of less than 80 nm, dependent on a dose of interstitial ions, was formed by plasma etching of an undoped area. A range of values of a dose of Ga+ ion beam for silicon doping was determined. Three-dimensional silicon-based structures with linear dimensions of about 100 nanometers were obtained. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Silicon-based nanostructures formed by plasma etching through a mask formed by a focused beam of Ga+ ions

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715070045
Publisher site
See Article on Publisher Site

Abstract

A method of formation of three-dimensional silicon-based nanostructures by a mask formation with the use of focused ion beam, for following plasma etching, is presented. A surface relief pattern, with depths of less than 80 nm, dependent on a dose of interstitial ions, was formed by plasma etching of an undoped area. A range of values of a dose of Ga+ ion beam for silicon doping was determined. Three-dimensional silicon-based structures with linear dimensions of about 100 nanometers were obtained.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 14, 2015

References

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