ISSN 10637397, Russian Microelectronics, 2015, Vol. 44, No. 7, pp. 482–486. © Pleiades Publishing, Ltd., 2015.
Original Russian Text © I.I. Bobrinetskii, A.V. Volkova, A.A. Zaitsev, V.K. Nevolin, K.A. Tsarik, A.A. Chudinov, 2014, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika,
2014, No. 2(106), pp. 43–49.
Today, plasma etching (PE) is one of the main tech
niques for the formation of nanosized elements with
linear dimensions of less than 100 nanometers for
manufacturing integrated circuits, as well as various
micro and nanoelectromechanical systems (MEMS
and NEMS). In comparison to wet etching, PE has a
high resolution, selectivity, and etching anisotropy, as
well as high controllability of the process .
A silicon surface doped by gallium ions is used as a
mask for plasma etching  (Fig. 1). Application of
this effect is described in [3, 4], where the feasibility of
the siliconbased nanoscale structures was demon
The focused ion beam (FIB) method for mask for
mation is a relatively new and advanced tool of nano
technology used to form the cross section of a microcir
cuit, the formation of 1D, 2D, and 3Dstructures, as
well as various MEMS and NEMS. However, for the
treatment of areas greater than 100
in size, the process of mask formation by FIB with
peak resolution around 10 nanometers is time con
suming and expensive. Therefore, the application of
this method is relevant to oneoff products, such as
nanoimprint lithography masks, and NEMS. Com
bining the technologies of PE and FIB doping mask
ing allows us to drastically reduce the creation time of
highlyintegrated nanosized elements.
The effect of silicon surface masking by doping
ions for the plasma etching process is studied in
this work. The effect of the operating characteristics of
the FIB and PE processes on the geometry of the
obtained siliconbased structures is studied. The
parameters of the obtained nanoscale structures as a
function of the technological process conditions were
Masking by FIB.
Localized doping of areas of the
N/Ph 4.5 ohmcm silicon by Ga
ions was carried out
by the nanotechnological complex Nanofab, includ
SiliconBased Nanostructures Formed by Plasma Etching
through a Mask Formed by a Focused Beam of Ga
I. I. Bobrinetskii, A. V. Volkova, A. A. Zaitsev, V. K. Nevolin, K. A. Tsarik, and A. A. Chudinov
National Research University of Electronic Technology MIET, Moscow, Russia
Received October 10, 2013
—A method of formation of threedimensional siliconbased nanostructures by a mask formation
with the use of focused ion beam, for following plasma etching, is presented. A surface relief pattern, with
depths of less than 80 nm, dependent on a dose of interstitial ions, was formed by plasma etching of an
undoped area. A range of values of a dose of Ga
ion beam for silicon doping was determined. Threedimen
sional siliconbased structures with linear dimensions of about 100 nanometers were obtained.
: focused ion beam, localized ion implantation, nanosized semiconductor structures, plasma etch
Etching of a mask
A scheme for forming siliconbased nanoscale structures by the PE of a silicon substrate with a masked area: (a) doping by
ions, (b) after PE.