Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

Significant Improvement of Transistor Transconductance and Speed by Using a Graded Channel

Significant Improvement of Transistor Transconductance and Speed by Using a Graded Channel A concept for the improvement of the speed of a short-channel (L g< 0.1–0.2 μm) FET is suggested. The effect is due to alternating local regions (∼10–20 nm) with a high and a low electron concentration and, correspondingly, a high and a low electric field that are created in the undergate region. A periodic decrease in the electron temperature in the low-resistivity regions of the channel is thought of to improve the mobility and effective transit speed of electrons in the transistor channel. This must improve the speed response of the transistor. Transistors based on such nonuniform structures may have the cutoff frequency of 1000 GHz or even higher. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Significant Improvement of Transistor Transconductance and Speed by Using a Graded Channel

Gergel', V.; Mokerov, V.
Russian Microelectronics , Volume 30 (4) – Oct 10, 2004
Download PDF
2 pages

Loading next page...
1
 
/lp/springer_journal/significant-improvement-of-transistor-transconductance-and-speed-by-Qa0pf2pjng

References (0)

References for this paper are not available at this time. We will be adding them shortly, thank you for your patience.

Publisher
Springer Journals
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
DOI
10.1023/A:1011350528637
Publisher site
See Article on Publisher Site

Abstract

A concept for the improvement of the speed of a short-channel (L g< 0.1–0.2 μm) FET is suggested. The effect is due to alternating local regions (∼10–20 nm) with a high and a low electron concentration and, correspondingly, a high and a low electric field that are created in the undergate region. A periodic decrease in the electron temperature in the low-resistivity regions of the channel is thought of to improve the mobility and effective transit speed of electrons in the transistor channel. This must improve the speed response of the transistor. Transistors based on such nonuniform structures may have the cutoff frequency of 1000 GHz or even higher.

Journal

Russian Microelectronics – Springer Journals

Published: Oct 10, 2004

There are no references for this article.