Significant Improvement of Transistor Transconductance and Speed by Using a Graded Channel

Significant Improvement of Transistor Transconductance and Speed by Using a Graded Channel A concept for the improvement of the speed of a short-channel (L g< 0.1–0.2 μm) FET is suggested. The effect is due to alternating local regions (∼10–20 nm) with a high and a low electron concentration and, correspondingly, a high and a low electric field that are created in the undergate region. A periodic decrease in the electron temperature in the low-resistivity regions of the channel is thought of to improve the mobility and effective transit speed of electrons in the transistor channel. This must improve the speed response of the transistor. Transistors based on such nonuniform structures may have the cutoff frequency of 1000 GHz or even higher. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Significant Improvement of Transistor Transconductance and Speed by Using a Graded Channel

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1011350528637
Publisher site
See Article on Publisher Site

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