A concept for the improvement of the speed of a short-channel (L g< 0.1–0.2 μm) FET is suggested. The effect is due to alternating local regions (∼10–20 nm) with a high and a low electron concentration and, correspondingly, a high and a low electric field that are created in the undergate region. A periodic decrease in the electron temperature in the low-resistivity regions of the channel is thought of to improve the mobility and effective transit speed of electrons in the transistor channel. This must improve the speed response of the transistor. Transistors based on such nonuniform structures may have the cutoff frequency of 1000 GHz or even higher.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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