Sign of bipolar-magnetotransistor sensitivity as dependent on device structure

Sign of bipolar-magnetotransistor sensitivity as dependent on device structure An experiment is conducted to compare the performance of two designs of dual-collector lateral bipolar magnetotransistor, which are formed in a uniformly doped substrate or a diffused well. Their respective differential collector voltages are found to differ in sign under an applied magnetic field. This effect is interpreted in terms of the sign of magnetic-field sensitivity. A computer simulation is run to investigate the distribution of carrier density, current density, or recombination rate for the latter type of magnetotransistor with a base and a substrate terminal being connected together. A bulk-recombination mechanism of negative sensitivity is revealed for a design with substrate terminals located on the front side only. It is traced to galvanomagnetic effects. Russian Microelectronics Springer Journals

Sign of bipolar-magnetotransistor sensitivity as dependent on device structure

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SP MAIK Nauka/Interperiodica
Copyright © 2008 by MAIK Nauka
Engineering; Electrical Engineering
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