Sign of bipolar-magnetotransistor sensitivity as dependent on device structure

Sign of bipolar-magnetotransistor sensitivity as dependent on device structure An experiment is conducted to compare the performance of two designs of dual-collector lateral bipolar magnetotransistor, which are formed in a uniformly doped substrate or a diffused well. Their respective differential collector voltages are found to differ in sign under an applied magnetic field. This effect is interpreted in terms of the sign of magnetic-field sensitivity. A computer simulation is run to investigate the distribution of carrier density, current density, or recombination rate for the latter type of magnetotransistor with a base and a substrate terminal being connected together. A bulk-recombination mechanism of negative sensitivity is revealed for a design with substrate terminals located on the front side only. It is traced to galvanomagnetic effects. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Sign of bipolar-magnetotransistor sensitivity as dependent on device structure

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2008 by MAIK Nauka
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739708050077
Publisher site
See Article on Publisher Site

Abstract

An experiment is conducted to compare the performance of two designs of dual-collector lateral bipolar magnetotransistor, which are formed in a uniformly doped substrate or a diffused well. Their respective differential collector voltages are found to differ in sign under an applied magnetic field. This effect is interpreted in terms of the sign of magnetic-field sensitivity. A computer simulation is run to investigate the distribution of carrier density, current density, or recombination rate for the latter type of magnetotransistor with a base and a substrate terminal being connected together. A bulk-recombination mechanism of negative sensitivity is revealed for a design with substrate terminals located on the front side only. It is traced to galvanomagnetic effects.

Journal

Russian MicroelectronicsSpringer Journals

Published: Sep 21, 2008

References

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