SiGe quantum rings on the Si(100) surface

SiGe quantum rings on the Si(100) surface Results of experimental studies of forming SiGe nanometer-size rings on the Si(100) surface by the molecular-beam epitaxy method are presented. Detailed shapes and size distributions of the grown nanorings are studied by the atomic-force microscopy method. The elemental composition is determined by the Raman scattering method. The average germanium content in the nanorings was 37% for a forming temperature of 680°C. The obtained data on the geometry and composition of the produced nanostructures were used for calculations by the 6-band k × p-method of the energy spectrum and charge density distribution of hole states, localized on the SiGe quantum rings embedded in the Si-matrix. It is shown that the heterostructures with quantum SiGe rings are promising objects for creating devices that are capable of detecting electromagnetic radiation in terahertz and infrared wavelength ranges. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712080100
Publisher site
See Article on Publisher Site

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