SiGe quantum rings on the Si(100) surface

SiGe quantum rings on the Si(100) surface Results of experimental studies of forming SiGe nanometer-size rings on the Si(100) surface by the molecular-beam epitaxy method are presented. Detailed shapes and size distributions of the grown nanorings are studied by the atomic-force microscopy method. The elemental composition is determined by the Raman scattering method. The average germanium content in the nanorings was 37% for a forming temperature of 680°C. The obtained data on the geometry and composition of the produced nanostructures were used for calculations by the 6-band k × p-method of the energy spectrum and charge density distribution of hole states, localized on the SiGe quantum rings embedded in the Si-matrix. It is shown that the heterostructures with quantum SiGe rings are promising objects for creating devices that are capable of detecting electromagnetic radiation in terahertz and infrared wavelength ranges. Russian Microelectronics Springer Journals

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SP MAIK Nauka/Interperiodica
Copyright © 2012 by Pleiades Publishing, Ltd.
Engineering; Electrical Engineering
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