Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities

Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current... It is shown theoretically and experimentally that an extended buried homogeneous Si3N4 layer 0.3–0.5 μm thick is formed at certain stages of the self-annealing bombardment of silicon wafers with a high-energy (500 keV per atom) nitrogen molecular-ion beam. The experiments are numerically simulated on the basis of the diffusion equations of chemical kinetics with regard to sputtering, thermal diffusion, and the formation of the nitride phase. The implant localization under the high-temperature (T = 1000°C) annealing of silicon layers irradiated to heavy doses is explained within a fractal model of cluster–cluster aggregation. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2002 by MAIK "Nauka/Interperiodica"
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1020239025451
Publisher site
See Article on Publisher Site

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