It is shown theoretically and experimentally that an extended buried homogeneous Si3N4 layer 0.3–0.5 μm thick is formed at certain stages of the self-annealing bombardment of silicon wafers with a high-energy (500 keV per atom) nitrogen molecular-ion beam. The experiments are numerically simulated on the basis of the diffusion equations of chemical kinetics with regard to sputtering, thermal diffusion, and the formation of the nitride phase. The implant localization under the high-temperature (T = 1000°C) annealing of silicon layers irradiated to heavy doses is explained within a fractal model of cluster–cluster aggregation.
Russian Microelectronics – Springer Journals
Published: Oct 13, 2004
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