Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities

Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current... It is shown theoretically and experimentally that an extended buried homogeneous Si3N4 layer 0.3–0.5 μm thick is formed at certain stages of the self-annealing bombardment of silicon wafers with a high-energy (500 keV per atom) nitrogen molecular-ion beam. The experiments are numerically simulated on the basis of the diffusion equations of chemical kinetics with regard to sputtering, thermal diffusion, and the formation of the nitride phase. The implant localization under the high-temperature (T = 1000°C) annealing of silicon layers irradiated to heavy doses is explained within a fractal model of cluster–cluster aggregation. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities

Loading next page...
 
/lp/springer_journal/si3n4-soi-structures-produced-by-nitrogen-ion-implantation-at-high-RiX0JApwDG
Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2002 by MAIK "Nauka/Interperiodica"
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1020239025451
Publisher site
See Article on Publisher Site

Abstract

It is shown theoretically and experimentally that an extended buried homogeneous Si3N4 layer 0.3–0.5 μm thick is formed at certain stages of the self-annealing bombardment of silicon wafers with a high-energy (500 keV per atom) nitrogen molecular-ion beam. The experiments are numerically simulated on the basis of the diffusion equations of chemical kinetics with regard to sputtering, thermal diffusion, and the formation of the nitride phase. The implant localization under the high-temperature (T = 1000°C) annealing of silicon layers irradiated to heavy doses is explained within a fractal model of cluster–cluster aggregation.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 13, 2004

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve Freelancer

DeepDyve Pro

Price
FREE
$49/month

$360/year
Save searches from Google Scholar, PubMed
Create lists to organize your research
Export lists, citations
Access to DeepDyve database
Abstract access only
Unlimited access to over
18 million full-text articles
Print
20 pages/month
PDF Discount
20% off