An x-ray structural characterization is carried out for MBE-grown Si/SixGe1 − x superlattices with nanometer layer thicknesses on Si(100) substrates. The characterization technique is a combination of x-ray reflectivity and x-ray diffraction in coplanar and noncoplanar arrangements. Detailed knowledge is gained of the superlattice structure, the crystalline quality of the layers, and the heterointerface morphology.
Russian Microelectronics – Springer Journals
Published: Jul 15, 2005
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