Self-organization of germanium highly ordered nanoclusters by the deposition of polycrystalline silicon films doped with germanium

Self-organization of germanium highly ordered nanoclusters by the deposition of polycrystalline... Aspects of the formation of self-organized clusters of germanium (Ge) and solid solution of SiGe, first formed in the mode of deposition of subthin polycrystalline silicon films doped with Ge on the nanoscale film of dielectrics were studied by techniques of atomic force microscopy and Raman scattering by optical phonons in germanium clusters. We found that in subthin polycrystalline silicon films (PSF) doped with Ge on the nanoscale films of dielectrics in conditions of PSF film deposition, there appeared correlated spatial distribution of germanium clusters, as well as silicon rich clusters in certain conditions, i.e., clusters of SiGe solid solution, with the modes of their formation. The relationship of the form, size, and density of Ge nanoclusters (NC), with the conditions of their self-organization is considered. The influence of interdiffusion processes on self-organizing of clusters is established, which is significant at high temperatures of the deposition and doping of PSF. It was found that clusters (islands) could occur on the cleavage surface in the form of four types of topographic features in a classical pyramid form, flat-topped pyramids, and domes and sharp spines, depending on the conditions of the deposition of PSF doped with Ge. The systems of highly organized Ge NC, measuring 3.5–40 nm and with a density of 2.7 × 107–3.5 × 10 cm−2 were obtained. The possibility, in principle, of managing the geometric parameters of self-organizing NC (nanoislands) by selecting the conditions of their self-organization in the mode of deposition of PSF doped with Ge, was shown. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Self-organization of germanium highly ordered nanoclusters by the deposition of polycrystalline silicon films doped with germanium

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739710030066
Publisher site
See Article on Publisher Site

Abstract

Aspects of the formation of self-organized clusters of germanium (Ge) and solid solution of SiGe, first formed in the mode of deposition of subthin polycrystalline silicon films doped with Ge on the nanoscale film of dielectrics were studied by techniques of atomic force microscopy and Raman scattering by optical phonons in germanium clusters. We found that in subthin polycrystalline silicon films (PSF) doped with Ge on the nanoscale films of dielectrics in conditions of PSF film deposition, there appeared correlated spatial distribution of germanium clusters, as well as silicon rich clusters in certain conditions, i.e., clusters of SiGe solid solution, with the modes of their formation. The relationship of the form, size, and density of Ge nanoclusters (NC), with the conditions of their self-organization is considered. The influence of interdiffusion processes on self-organizing of clusters is established, which is significant at high temperatures of the deposition and doping of PSF. It was found that clusters (islands) could occur on the cleavage surface in the form of four types of topographic features in a classical pyramid form, flat-topped pyramids, and domes and sharp spines, depending on the conditions of the deposition of PSF doped with Ge. The systems of highly organized Ge NC, measuring 3.5–40 nm and with a density of 2.7 × 107–3.5 × 10 cm−2 were obtained. The possibility, in principle, of managing the geometric parameters of self-organizing NC (nanoislands) by selecting the conditions of their self-organization in the mode of deposition of PSF doped with Ge, was shown.

Journal

Russian MicroelectronicsSpringer Journals

Published: May 20, 2010

References

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