The optimization of the construction and technology of bipolar self-aligned SHF transistor structures with direct and inverted ultrathin emitter regions is carried out. The threshold amplification frequency and maximum oscillation frequency, which are 500 GHz, are shown to be reachable when using self-adjoined pseudo-lithographic masks and decreasing parasitic capacities and resistances. Methods for creating direct and inverted extremely narrow emitter regions doped with arsenic are proposed.
Russian Microelectronics – Springer Journals
Published: Nov 14, 2014
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