Selection of the heating method of semiconductor devices during their testing in a high-conductivity state

Selection of the heating method of semiconductor devices during their testing in a... Possible heating methods of power semiconductor devices during their testing in a high-conductivity state are discussed. It is shown that the diffusion capacitance of the p–n junction has a significant effect on measurements of device parameters. The effect of the diffusion capacitance on the results of testing of power semiconductor devices at various shapes of heating-current pulses was investigated. Conclusions on the possibility of using current pulses of various shapes for testing power semiconductor devices in the highconductivity state are drawn. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Electrical Engineering Springer Journals

Selection of the heating method of semiconductor devices during their testing in a high-conductivity state

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Publisher
Allerton Press
Copyright
Copyright © 2017 by Allerton Press, Inc.
Subject
Engineering; Manufacturing, Machines, Tools
ISSN
1068-3712
eISSN
1934-8010
D.O.I.
10.3103/S1068371217060074
Publisher site
See Article on Publisher Site

Abstract

Possible heating methods of power semiconductor devices during their testing in a high-conductivity state are discussed. It is shown that the diffusion capacitance of the p–n junction has a significant effect on measurements of device parameters. The effect of the diffusion capacitance on the results of testing of power semiconductor devices at various shapes of heating-current pulses was investigated. Conclusions on the possibility of using current pulses of various shapes for testing power semiconductor devices in the highconductivity state are drawn.

Journal

Russian Electrical EngineeringSpringer Journals

Published: Aug 23, 2017

References

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