Requirements are defined for GaAs materials intended for solid-state detectors of ionizing radiation. A model is proposed to ascertain the role of deep-level centers in compensated semi-insulating GaAs. The model consists of transport equations and a charge-balance equation describing carrier transitions in a multi-level system. Its numerical analysis is performed to ascertain the relationship to be satisfied by dopant concentrations.
Russian Microelectronics – Springer Journals
Published: Sep 21, 2008
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