The reverse gate current of heterostructure MESFETs is studied experimentally. The behavior of the reverse I-V characteristic is shown to be consistent with the tunneling mechanism of the current. The curve is discussed with regard to two special features of a planar device configuration: the full depletion of the doped layer and the δ-shaped character of the doping profile.
Russian Microelectronics – Springer Journals
Published: Nov 16, 2007
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