Silicon carbide, introduced into titanium carbide matrix via gas-phase mass transfer and subsequent deposition in the intergranular contact zone, acts as a shield for TiC grains. This results in a sharp retardation of the collective recrystallization and thus provides a means of controlling formation of the composite ceramic microstructure under sintering and hot-pressing conditions. By varying the composition and processing parameters in the TiC – SiC system, one can control the microstructure of ceramic materials to optimize their electrophysical and physicomechanical properties
Refractories and Industrial Ceramics – Springer Journals
Published: Sep 30, 2004
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