Response Mechanism of the Base-in-Well Bipolar Magnetotransistor

Response Mechanism of the Base-in-Well Bipolar Magnetotransistor For the base-in-well bipolar magnetotransistor, a computer simulation is conducted in conjunction with an experiment. The following points are made: (i) Bulk recombination is important in the response of the device to an applied magnetic field. (ii) The device shows threshold behavior. (iii) The relative magnetic-field sensitivity of collector current is dependent on the applied magnetic flux density; moreover, the former grows in magnitude with decreasing flux density if this is sufficiently low. (iv) The relative sensitivity changes sign as the base bias is varied. A maximum relative sensitivity of about 2000 T−1 is achieved in measurements of the earth’s magnetic field. Russian Microelectronics Springer Journals

Response Mechanism of the Base-in-Well Bipolar Magnetotransistor

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Copyright © 2005 by MAIK “Nauka/Interperiodica”
Engineering; Electrical Engineering
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