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The memristor metal-oxide-metal structures involving the layers of stoichiometric hafnia and nonstoichiometric hafnia doped with aluminum, as well as the metal-oxide-extracting metal layer structures involving the layers of hafnia and titanium, are fabricated. The oxide layers are coated using the atomic layer deposition. The resistive switching parameters of the structures are determined.
Russian Microelectronics – Springer Journals
Published: Sep 12, 2014
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