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Resistive switching in TiN/Hf x Al1 − x O y /HfO2/TiN and TiN/HfO2/Ti/TiN structures

Resistive switching in TiN/Hf x Al1 − x O y /HfO2/TiN and TiN/HfO2/Ti/TiN structures The memristor metal-oxide-metal structures involving the layers of stoichiometric hafnia and nonstoichiometric hafnia doped with aluminum, as well as the metal-oxide-extracting metal layer structures involving the layers of hafnia and titanium, are fabricated. The oxide layers are coated using the atomic layer deposition. The resistive switching parameters of the structures are determined. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Resistive switching in TiN/Hf x Al1 − x O y /HfO2/TiN and TiN/HfO2/Ti/TiN structures

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References (21)

Publisher
Springer Journals
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
DOI
10.1134/S1063739714050059
Publisher site
See Article on Publisher Site

Abstract

The memristor metal-oxide-metal structures involving the layers of stoichiometric hafnia and nonstoichiometric hafnia doped with aluminum, as well as the metal-oxide-extracting metal layer structures involving the layers of hafnia and titanium, are fabricated. The oxide layers are coated using the atomic layer deposition. The resistive switching parameters of the structures are determined.

Journal

Russian MicroelectronicsSpringer Journals

Published: Sep 12, 2014

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