Reversible and stable bistable resistive switching were observed in planar-type junctions Nd2–x Ce x CuO4–y /Nd2–x Ce x O1.75/Ag. It was shown that current transport in such junctions has a diode character with Schottky-like barriers in highly doped semiconductors. It was revealed that the key factor for switching is the presence of the second phase Nd2–x Ce x O1.75, deficient in oxygen, epitaxially germinated at the Nd2–x Ce x CuO4–y surface.
Russian Microelectronics – Springer Journals
Published: Jun 2, 2017
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