Residual-Photoresist Removal from Si and GaAs Surfaces by Atomic-Hydrogen Flow Treatment

Residual-Photoresist Removal from Si and GaAs Surfaces by Atomic-Hydrogen Flow Treatment It is shown by experiment that a directed atomic-hydrogen stream offers a means of residual-photoresist removal from Si and GaAs surfaces. The dependence of postprocess surface roughness on process time and temperature is investigated. It is demonstrated by AFM measurement that the atomic-hydrogen treatment can reduce GaAs surface roughness. It is concluded that the technique is as effective as the conventional oxygen-plasma removal. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Residual-Photoresist Removal from Si and GaAs Surfaces by Atomic-Hydrogen Flow Treatment

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2005 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/s11180-005-0021-8
Publisher site
See Article on Publisher Site

Abstract

It is shown by experiment that a directed atomic-hydrogen stream offers a means of residual-photoresist removal from Si and GaAs surfaces. The dependence of postprocess surface roughness on process time and temperature is investigated. It is demonstrated by AFM measurement that the atomic-hydrogen treatment can reduce GaAs surface roughness. It is concluded that the technique is as effective as the conventional oxygen-plasma removal.

Journal

Russian MicroelectronicsSpringer Journals

Published: May 19, 2005

References

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