It is shown by experiment that a directed atomic-hydrogen stream offers a means of residual-photoresist removal from Si and GaAs surfaces. The dependence of postprocess surface roughness on process time and temperature is investigated. It is demonstrated by AFM measurement that the atomic-hydrogen treatment can reduce GaAs surface roughness. It is concluded that the technique is as effective as the conventional oxygen-plasma removal.
Russian Microelectronics – Springer Journals
Published: May 19, 2005
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