Research and development of deep anisotropic plasma silicon etching process to form MEMS structures

Research and development of deep anisotropic plasma silicon etching process to form MEMS structures Process characteristics of deep silicon etching as a function of its operational parameters are investigated. A process of deep anisotropic plasma etching process is developed and optimized to form MEMS silicon structures. The results of the work are used in forming MEMS working structures. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Research and development of deep anisotropic plasma silicon etching process to form MEMS structures

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712070062
Publisher site
See Article on Publisher Site

Abstract

Process characteristics of deep silicon etching as a function of its operational parameters are investigated. A process of deep anisotropic plasma etching process is developed and optimized to form MEMS silicon structures. The results of the work are used in forming MEMS working structures.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 7, 2012

References

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