Relaxation modification of the morphology of atomically clean silicon (100) crystal surfaces after treatment with SHF plasma

Relaxation modification of the morphology of atomically clean silicon (100) crystal surfaces... Relaxation modification of the nanomorphology of atomically clean surfaces of silicon (100) crystals with different conductivity types, obtained using low-energy low-pressure SHF plasma, was studied. The influence of the chemical activity of the working gases used on the character and kinetics of postprocess changes in the nanomorhpology was revealed. It was shown that the type of the kinetic dependences is defined by the semiconductor type; the minimal surface energy and a better quality of the interface structure appear after the low-energy SHF plasma treatment in an argon atmosphere. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Relaxation modification of the morphology of atomically clean silicon (100) crystal surfaces after treatment with SHF plasma

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716040120
Publisher site
See Article on Publisher Site

Abstract

Relaxation modification of the nanomorphology of atomically clean surfaces of silicon (100) crystals with different conductivity types, obtained using low-energy low-pressure SHF plasma, was studied. The influence of the chemical activity of the working gases used on the character and kinetics of postprocess changes in the nanomorhpology was revealed. It was shown that the type of the kinetic dependences is defined by the semiconductor type; the minimal surface energy and a better quality of the interface structure appear after the low-energy SHF plasma treatment in an argon atmosphere.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 14, 2016

References

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