Regularities of the formation of fractal porous clusters in silicon

Regularities of the formation of fractal porous clusters in silicon Using the experimental results and computer simulation data, we demonstrate the existence of technological regimes of pore formation in the electrolyte-silicon system that are controlled by the delivery of holes to the interface between the two media. We develop a dynamic sequential 3D computer model for describing the formation of porous clusters in silicon with regard to different aspects of anodization, including the electric potential variation in the system at the change in configuration of the interface between the crystal and electrolyte. We investigate features of the hole transport regime described by equations scale-invariant relative to the affine transformation of space and time variables. Porous clusters formed using such technological regimes are characterized by the fractal self-similarity. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Regularities of the formation of fractal porous clusters in silicon

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Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714030032
Publisher site
See Article on Publisher Site

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