Reactive ion etching of copper in an RF N2 + BCl3 + Cl2 Plasma

Reactive ion etching of copper in an RF N2 + BCl3 + Cl2 Plasma Reactive ion etching (RIE) of copper in a cold-wall reactor is described. When the rf discharge power is sufficiently high, the etch surface temperature becomes sufficient for reaction product removal due to plasma-wafer heat exchange. The etching process can easily be controlled by monitoring the line intensity in the CuCl emission spectrum. For example, the 435.8-nm line allows operators to fix the instant of etch completion and to keep track of the process Russian Microelectronics Springer Journals

Reactive ion etching of copper in an RF N2 + BCl3 + Cl2 Plasma

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Copyright © 2000 by MAIK “Nauka/Interperiodica”
Engineering; Electronic and Computer Engineering
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