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Reactive ion etching of copper in an RF N2 + BCl3 + Cl2 Plasma

Reactive ion etching of copper in an RF N2 + BCl3 + Cl2 Plasma Reactive ion etching (RIE) of copper in a cold-wall reactor is described. When the rf discharge power is sufficiently high, the etch surface temperature becomes sufficient for reaction product removal due to plasma-wafer heat exchange. The etching process can easily be controlled by monitoring the line intensity in the CuCl emission spectrum. For example, the 435.8-nm line allows operators to fix the instant of etch completion and to keep track of the process http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Reactive ion etching of copper in an RF N2 + BCl3 + Cl2 Plasma

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References (10)

Publisher
Springer Journals
Copyright
Copyright © 2000 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electronic and Computer Engineering
ISSN
1063-7397
eISSN
1608-3415
DOI
10.1007/BF02773271
Publisher site
See Article on Publisher Site

Abstract

Reactive ion etching (RIE) of copper in a cold-wall reactor is described. When the rf discharge power is sufficiently high, the etch surface temperature becomes sufficient for reaction product removal due to plasma-wafer heat exchange. The etching process can easily be controlled by monitoring the line intensity in the CuCl emission spectrum. For example, the 435.8-nm line allows operators to fix the instant of etch completion and to keep track of the process

Journal

Russian Microelectronics – Springer Journals

Published: Dec 4, 2007

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