Reactive ion etching (RIE) of copper in a cold-wall reactor is described. When the rf discharge power is sufficiently high, the etch surface temperature becomes sufficient for reaction product removal due to plasma-wafer heat exchange. The etching process can easily be controlled by monitoring the line intensity in the CuCl emission spectrum. For example, the 435.8-nm line allows operators to fix the instant of etch completion and to keep track of the process
Russian Microelectronics – Springer Journals
Published: Dec 4, 2007
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