Reactive Ion-Beam Etching of Thick Polyimide Layers in an Oxygen + Argon Mixture

Reactive Ion-Beam Etching of Thick Polyimide Layers in an Oxygen + Argon Mixture Polyimide layers up to 50 μm in thickness were ion-etched in an oxygen + argon mixture. It was found that etching of blank polyimide and etching of polyimide through a metallic mask differ essentially. Conditions of etching through an aluminum mask 0.8 μm thick are optimal when pure oxygen is used as an operating gas, the ion current density jis 0.5 mA/cm2, ion extraction energy Uequals 800 V, and surface temperature is no more than 100°C. Under these conditions, the mean rate of mask etching is 0.26 μm/min and coincides with the etch rate without the mask. A wide-aperture cold-hollow-cathode ion source based on a two-stage low-pressure self-sustained discharge provides a necessary etching duration and the constancy of etching parameters. Grooves etched are vertical (free of etch taper) and have the pure bottom. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Reactive Ion-Beam Etching of Thick Polyimide Layers in an Oxygen + Argon Mixture

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1011996829886
Publisher site
See Article on Publisher Site

Abstract

Polyimide layers up to 50 μm in thickness were ion-etched in an oxygen + argon mixture. It was found that etching of blank polyimide and etching of polyimide through a metallic mask differ essentially. Conditions of etching through an aluminum mask 0.8 μm thick are optimal when pure oxygen is used as an operating gas, the ion current density jis 0.5 mA/cm2, ion extraction energy Uequals 800 V, and surface temperature is no more than 100°C. Under these conditions, the mean rate of mask etching is 0.26 μm/min and coincides with the etch rate without the mask. A wide-aperture cold-hollow-cathode ion source based on a two-stage low-pressure self-sustained discharge provides a necessary etching duration and the constancy of etching parameters. Grooves etched are vertical (free of etch taper) and have the pure bottom.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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