Rational methodological approach to evaluation of dose resistance of CMOS microcircuits with respect to low intensity effects

Rational methodological approach to evaluation of dose resistance of CMOS microcircuits with... A rational methodological approach to the evaluation of the total dose hardness of CMOS microcircuits with respect to low dose rate effects supported by the results of the simulation analysis and experimental studies of a wide range of products is presented. This approach makes it possible to choose the necessary and sufficient amount of radiation researches that provide accurate and informative engineering evaluation of radiation hardness of CMOS microcircuits for use in space hardware. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Rational methodological approach to evaluation of dose resistance of CMOS microcircuits with respect to low intensity effects

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715010035
Publisher site
See Article on Publisher Site

Abstract

A rational methodological approach to the evaluation of the total dose hardness of CMOS microcircuits with respect to low dose rate effects supported by the results of the simulation analysis and experimental studies of a wide range of products is presented. This approach makes it possible to choose the necessary and sufficient amount of radiation researches that provide accurate and informative engineering evaluation of radiation hardness of CMOS microcircuits for use in space hardware.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 7, 2015

References

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