Rapid Thermal Processing: A New Step Forward in Microelectronics Technologies

Rapid Thermal Processing: A New Step Forward in Microelectronics Technologies Comparative analysis of the advantages and disadvantages of RTP systems and diffusion furnaces (DFs) in terms of the cost efficiency and performance is presented. RTP systems outperform DFs when high temperatures and short processing times are required. The latter are preferable in the case of long-term processes, where large periods of loading/unloading and cooling have a minor effect of the throughput. The performance of the equipment is estimated by conducting such processes as the growth of a gate dielectric, TiSi2formation, and formation of shallow p–njunctions. Short processing times, high heating rates, high purity of process gases, and the possibility of quickly changing over between various process gases are those advantages of RTP that allow this approach to be viewed as a promising way for manufacturing submicron ICs. It is shown that RTP will dominate in the production of sub-0.25-μm ICs and may be a contributory factor for future advances in microelectronic technologies. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Rapid Thermal Processing: A New Step Forward in Microelectronics Technologies

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Publisher
Springer Journals
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1011346427728
Publisher site
See Article on Publisher Site

Abstract

Comparative analysis of the advantages and disadvantages of RTP systems and diffusion furnaces (DFs) in terms of the cost efficiency and performance is presented. RTP systems outperform DFs when high temperatures and short processing times are required. The latter are preferable in the case of long-term processes, where large periods of loading/unloading and cooling have a minor effect of the throughput. The performance of the equipment is estimated by conducting such processes as the growth of a gate dielectric, TiSi2formation, and formation of shallow p–njunctions. Short processing times, high heating rates, high purity of process gases, and the possibility of quickly changing over between various process gases are those advantages of RTP that allow this approach to be viewed as a promising way for manufacturing submicron ICs. It is shown that RTP will dominate in the production of sub-0.25-μm ICs and may be a contributory factor for future advances in microelectronic technologies.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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