Radical Modification of Gate Oxide by Lateral Gettering of Electroactive Centers

Radical Modification of Gate Oxide by Lateral Gettering of Electroactive Centers An approach to radically modifying gate dielectric by laterally gettering electroactive defects (centers) is suggested. Gettering of the ionized centers is accomplished through intentionally creating structure defects in the surface layers of the side oxide that are adjacent to the periphery of the gate oxide. The process was carried out at low temperatures, e.g., during postmetallization annealing in a hydrogen-free atmosphere. The structure defects in the side oxide capture excessive hydrogen, which otherwise produces ionized donors in the gate oxide layer. If the gate size is comparable to the hydrogen diffusion length (5–10 μm), ionized acceptor centers of concentration no more than 1011 cm–2 dominate in the gate oxide after annealing. This is apparently related to the minimization of excessive hydrogen content in the gate oxide of structures with small lateral dimensions. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Radical Modification of Gate Oxide by Lateral Gettering of Electroactive Centers

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2000 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1026648321022
Publisher site
See Article on Publisher Site

Abstract

An approach to radically modifying gate dielectric by laterally gettering electroactive defects (centers) is suggested. Gettering of the ionized centers is accomplished through intentionally creating structure defects in the surface layers of the side oxide that are adjacent to the periphery of the gate oxide. The process was carried out at low temperatures, e.g., during postmetallization annealing in a hydrogen-free atmosphere. The structure defects in the side oxide capture excessive hydrogen, which otherwise produces ionized donors in the gate oxide layer. If the gate size is comparable to the hydrogen diffusion length (5–10 μm), ionized acceptor centers of concentration no more than 1011 cm–2 dominate in the gate oxide after annealing. This is apparently related to the minimization of excessive hydrogen content in the gate oxide of structures with small lateral dimensions.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 8, 2004

References

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