A technique for investigating CMOS memory chips under exposure to ionizing radiation and the results of their radiation tests are presented. Possible mechanisms of degradation and approaches to increasing the radiation resistance of integrated circuits by the access time criterion are analyzed. The effect of the nonuniform degradation of the access time depending on the address has been discovered and investigated in the experiment.
Russian Microelectronics – Springer Journals
Published: Jul 12, 2012
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