Radiation-induced degradation in the dynamic parameters of memory chips

Radiation-induced degradation in the dynamic parameters of memory chips A technique for investigating CMOS memory chips under exposure to ionizing radiation and the results of their radiation tests are presented. Possible mechanisms of degradation and approaches to increasing the radiation resistance of integrated circuits by the access time criterion are analyzed. The effect of the nonuniform degradation of the access time depending on the address has been discovered and investigated in the experiment. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Radiation-induced degradation in the dynamic parameters of memory chips

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Publisher
Springer Journals
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373971204004X
Publisher site
See Article on Publisher Site

Abstract

A technique for investigating CMOS memory chips under exposure to ionizing radiation and the results of their radiation tests are presented. Possible mechanisms of degradation and approaches to increasing the radiation resistance of integrated circuits by the access time criterion are analyzed. The effect of the nonuniform degradation of the access time depending on the address has been discovered and investigated in the experiment.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 12, 2012

References

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