A quasi-hydrodynamic model is developed for carrier transport under ionizing irradiation subject to the nonsteady-state thermal effect of the current on the semiconductor lattice. Computer simulations are run for the thermal breakdown of a nonuniformly doped pn junction caused by a pulse of ionizing radiation. The simulation model includes the temperature dependence of electron energy and momentum relaxation times and the suppression of impact ionization with increasing temperature. The simulation results are verified by comparison with previously reported experimental data.
Russian Microelectronics – Springer Journals
Published: Apr 6, 2010
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