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C. Sah, Jack Sun, J. Tzou (1983)
Generation‐annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn‐around phenomena on oxidized silicon during avalanche electron injectionJournal of Applied Physics, 54
C. Sah (1976)
Origin of Interface States and Oxide Charges Generated by Ionizing RadiationIEEE Transactions on Nuclear Science, 23
P. Antognetti, D. Antoniadis, R. Dutton, W. Oldham (1983)
Process and device simulation for MOS-VLSI circuits
A. Revesz (1971)
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A.I. Andreev, I.I. Katerinich, V.D. Popov (2004)
Nadezhnost’ i kontrol’ kachestva integral’nykh mikroskhem. Tekst lektsii
C.M. Svensson (1978)
The Physics of SiO2 and Its Interfaces
F. Grunthaner, B. Lewis, N. Zamini, J. Maserjian, A. Madhukar (1980)
XPS Studies of Structure-Induced Radiation Effects at the Si/SiO2 InterfaceIEEE Transactions on Nuclear Science, 27
F.J. Grunthaner, F.B. Lewis, N. Zamini (1980)
X-ray Photoelectron Spectroscopy Studies of Structure Induced Radiation Effects at the Si/SiO2 InterfaceIEEE Trans. Nucl. Sci., 27
C. Svensson (1978)
THE DEFECT STRUCTURE OF THE Si-SiO2 INTERFACE, A MODEL BASED ON TRIVALENT SILICON AND ITS HYDROGEN “COMPOUNDS”
F. Grunthaner, J. Maserjian (1977)
Experimental Observations of the Chemistry of the SiO2/Si InterfaceIEEE Transactions on Nuclear Science, 24
A. Revesz (1977)
Chemical and Structural Aspects of the Irradiation Behavior of SiO2 Films on SiliconIEEE Transactions on Nuclear Science, 24
F. Grunthaner, P. Grunthaner, J. Maserjian (1982)
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H. Boesch, J. McGarrity (1979)
An Electrical Technique to Measure the Radiation Susceptibility of MOS Gate InsulatorsIEEE Transactions on Nuclear Science, 26
A technique of radiation-enhanced thermal oxidation of silicon is developed and implemented in process equipment. Test SiO2 films are grown under exposure to 511-keV gamma-ray photons. Their electrical and radiation performance are evaluated. Basic mechanisms of radiation-enhanced oxide growth are proposed.
Russian Microelectronics – Springer Journals
Published: Feb 1, 2007
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