Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

Radiation-enhanced thermal oxidation of silicon

Radiation-enhanced thermal oxidation of silicon A technique of radiation-enhanced thermal oxidation of silicon is developed and implemented in process equipment. Test SiO2 films are grown under exposure to 511-keV gamma-ray photons. Their electrical and radiation performance are evaluated. Basic mechanisms of radiation-enhanced oxide growth are proposed. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Radiation-enhanced thermal oxidation of silicon

Russian Microelectronics , Volume 36 (1) – Feb 1, 2007

Loading next page...
 
/lp/springer_journal/radiation-enhanced-thermal-oxidation-of-silicon-K9XWILdypD

References (13)

Publisher
Springer Journals
Copyright
Copyright © 2007 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
DOI
10.1134/S1063739707010076
Publisher site
See Article on Publisher Site

Abstract

A technique of radiation-enhanced thermal oxidation of silicon is developed and implemented in process equipment. Test SiO2 films are grown under exposure to 511-keV gamma-ray photons. Their electrical and radiation performance are evaluated. Basic mechanisms of radiation-enhanced oxide growth are proposed.

Journal

Russian MicroelectronicsSpringer Journals

Published: Feb 1, 2007

There are no references for this article.