Radiation effects on memristor-based non-volatile SRAM cells

Radiation effects on memristor-based non-volatile SRAM cells Memristors are a promising candidate for non-volatile memory elements. In this paper, we performed a radiation study on different memristor-based topological Non-Volatile Static Random Access Memory (NVSRAM). A Voltage ThrEshold Adaptive Memristor (VTEAM) model is considered for simulation analysis related to this work. In this paper, four different topologies, namely 3-Transistor 2-Memristor (3T2M) SRAM cell, 2-Transmission Gate 1-Memristor (2TG1M) SRAM cell, 1-Transistor 1-Memristor (1T1M) SRAM cell, and 4-Transistor 2-Memristor (4T2M) SRAM cell are investigated. A double-exponential current pulse is induced during a read operation and perturbation is observed due to irradiation. The memory cell retains its original state after radiation dose is removed. 4T2M SRAM topology is more reliable because its highest threshold current value is $$100\,{\upmu }\hbox {A}$$ 100 μ A , whereas 1T1M SRAM topology is less reliable with the lowest threshold current value of 5 nA. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Computational Electronics Springer Journals

Radiation effects on memristor-based non-volatile SRAM cells

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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC
Subject
Engineering; Mathematical and Computational Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering
ISSN
1569-8025
eISSN
1572-8137
D.O.I.
10.1007/s10825-017-1080-x
Publisher site
See Article on Publisher Site

Abstract

Memristors are a promising candidate for non-volatile memory elements. In this paper, we performed a radiation study on different memristor-based topological Non-Volatile Static Random Access Memory (NVSRAM). A Voltage ThrEshold Adaptive Memristor (VTEAM) model is considered for simulation analysis related to this work. In this paper, four different topologies, namely 3-Transistor 2-Memristor (3T2M) SRAM cell, 2-Transmission Gate 1-Memristor (2TG1M) SRAM cell, 1-Transistor 1-Memristor (1T1M) SRAM cell, and 4-Transistor 2-Memristor (4T2M) SRAM cell are investigated. A double-exponential current pulse is induced during a read operation and perturbation is observed due to irradiation. The memory cell retains its original state after radiation dose is removed. 4T2M SRAM topology is more reliable because its highest threshold current value is $$100\,{\upmu }\hbox {A}$$ 100 μ A , whereas 1T1M SRAM topology is less reliable with the lowest threshold current value of 5 nA.

Journal

Journal of Computational ElectronicsSpringer Journals

Published: Nov 8, 2017

References

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