Radiation effects in a BiCMOS LSI interface transceiver

Radiation effects in a BiCMOS LSI interface transceiver The results are presented of a radiation-effect simulation in the 5559IN2T serial-data BiCMOS LSI interface transceiver. The circuit is found to have a fairly high level of radiation hardness: the performance parameters considered remain within the tolerance limits at equivalent dose rates of pulsed radiation up to P = 1 × 109 unit/s and at equivalent doses of steady-state radiation up to D = 2.4 × 105 units, and the circuit can operate at equivalent dose rates up to P = 2 × 1010 unit/s over the temperature range −60 to +125°C. The physical mechanisms underlying the observed behavior are discussed. Analytical formulas are derived that represent the dose dependence of transceiver consumption current as a quadratic polynomial. They could be used to predict the resistance of the circuit to steady-state ionizing radiation. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Radiation effects in a BiCMOS LSI interface transceiver

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SP MAIK Nauka/Interperiodica
Copyright © 2008 by Pleiades Publishing, Ltd.
Engineering; Electrical Engineering
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