Quantum Monte Carlo simulation of dissipative transport using Bohmian trajectories

Quantum Monte Carlo simulation of dissipative transport using Bohmian trajectories In this paper, a Monte Carlo method is proposed, which utilizes Bohmian trajectories to simulate dissipative transport in one-dimensional quantum devices. The proposed method, similar to the classical Monte Carlo method, is capable of simulating both elastic and inelastic scattering effects, with the distinction that quantum effects such as tunneling are also included. At first, the Bohmian trajectories for the wave packets injected from the right and the left contacts are obtained by solving the time-dependent Schrodinger equation, and then scattering effects are included via stochastic changes applied on the electron trajectories. We have shown that the results of the proposed model agree well with those of NEGF formalism. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Computational Electronics Springer Journals

Quantum Monte Carlo simulation of dissipative transport using Bohmian trajectories

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Engineering; Mathematical and Computational Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering
ISSN
1569-8025
eISSN
1572-8137
D.O.I.
10.1007/s10825-017-1117-1
Publisher site
See Article on Publisher Site

Abstract

In this paper, a Monte Carlo method is proposed, which utilizes Bohmian trajectories to simulate dissipative transport in one-dimensional quantum devices. The proposed method, similar to the classical Monte Carlo method, is capable of simulating both elastic and inelastic scattering effects, with the distinction that quantum effects such as tunneling are also included. At first, the Bohmian trajectories for the wave packets injected from the right and the left contacts are obtained by solving the time-dependent Schrodinger equation, and then scattering effects are included via stochastic changes applied on the electron trajectories. We have shown that the results of the proposed model agree well with those of NEGF formalism.

Journal

Journal of Computational ElectronicsSpringer Journals

Published: Dec 14, 2017

References

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