Quantum Computer Development with Single Ion Implantation

Quantum Computer Development with Single Ion Implantation Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon. Formation of devices with a few qubits is crucial for validation of basic ideas and development of a scalable architecture. We describe our development of a single ion implantation technique for placement of single atoms into device structures. Collimated highly charged ion beams are aligned with a scanning probe microscope. Enhanced secondary electron emission due tohigh ion charge states (e.g., 31P13+, or 126Te33+)allows efficient detection of single ion impacts. Studies of electrical activation of low dose, low energy implants of 31P in silicon show a drastic effect of dopant segregation to the SiO2/Si interface,while Si3N4/Si retards 31P segregation. We discuss resolution limiting factors in ion placement, and process challenges forintegration of single atom arrays with control gates and single electron transistors. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Quantum Information Processing Springer Journals

Quantum Computer Development with Single Ion Implantation

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2004 by Springer Science + Business Media, Inc.
Subject
Physics; Quantum Information Technology, Spintronics; Quantum Computing; Data Structures, Cryptology and Information Theory; Quantum Physics; Mathematical Physics
ISSN
1570-0755
eISSN
1573-1332
D.O.I.
10.1007/s11128-004-3879-1
Publisher site
See Article on Publisher Site

Abstract

Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon. Formation of devices with a few qubits is crucial for validation of basic ideas and development of a scalable architecture. We describe our development of a single ion implantation technique for placement of single atoms into device structures. Collimated highly charged ion beams are aligned with a scanning probe microscope. Enhanced secondary electron emission due tohigh ion charge states (e.g., 31P13+, or 126Te33+)allows efficient detection of single ion impacts. Studies of electrical activation of low dose, low energy implants of 31P in silicon show a drastic effect of dopant segregation to the SiO2/Si interface,while Si3N4/Si retards 31P segregation. We discuss resolution limiting factors in ion placement, and process challenges forintegration of single atom arrays with control gates and single electron transistors.

Journal

Quantum Information ProcessingSpringer Journals

Published: Dec 30, 2004

References

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