Quantitative Optical Inspection of Mirror-Like Wafer Surfaces

Quantitative Optical Inspection of Mirror-Like Wafer Surfaces A conceptual framework for the quantitative optical inspection of mirror-like wafer surfaces is presented. Methods for the computer-aided analysis of surface defects on the basis of optical topographs are described. Defect imaging by optical topography is addressed. Relations between geometric parameters of an individual defect and the brightness of its image on the screen are established. Some measures of wafer topographical quality are proposed. The concepts are illustrated in the context of silicon wafers. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Quantitative Optical Inspection of Mirror-Like Wafer Surfaces

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1023965821073
Publisher site
See Article on Publisher Site

Abstract

A conceptual framework for the quantitative optical inspection of mirror-like wafer surfaces is presented. Methods for the computer-aided analysis of surface defects on the basis of optical topographs are described. Defect imaging by optical topography is addressed. Relations between geometric parameters of an individual defect and the brightness of its image on the screen are established. Some measures of wafer topographical quality are proposed. The concepts are illustrated in the context of silicon wafers.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

References

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