Propagation of polarization of ferroelectric grains in electrically isolated lithium niobate films

Propagation of polarization of ferroelectric grains in electrically isolated lithium niobate films Piezoresponse force microscopy has been applied for the study of ferroelectric properties of lithium niobate thin films. The films have been obtained on a silicon surface {110}, coated with a thin layer of SiO2 using high-frequency magnetron spraying of lithium niobate. It has been demonstrated that after polarization of a sample surface segment with positive or negative potential using a conductive probe of an atomic force microscope the effect of propagation (spreading) of the region of grain polarized state with a decrease in the piezoresponse amplitude is observed. Moreover, the polarization occurs stepwise, that is, the Barkhausen effect takes place at the nanometer level. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Propagation of polarization of ferroelectric grains in electrically isolated lithium niobate films

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712080197
Publisher site
See Article on Publisher Site

Abstract

Piezoresponse force microscopy has been applied for the study of ferroelectric properties of lithium niobate thin films. The films have been obtained on a silicon surface {110}, coated with a thin layer of SiO2 using high-frequency magnetron spraying of lithium niobate. It has been demonstrated that after polarization of a sample surface segment with positive or negative potential using a conductive probe of an atomic force microscope the effect of propagation (spreading) of the region of grain polarized state with a decrease in the piezoresponse amplitude is observed. Moreover, the polarization occurs stepwise, that is, the Barkhausen effect takes place at the nanometer level.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 17, 2012

References

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