It is shown that MBE-grown Si/CaF2/Si heterostructures are promising for SOI technology. On the basis of these heterostructures, test MIS/SOI structures were created. The mean electron mobility in the top silicon layer was found to be 450–600 cm2/ (V s). A test CMOS IC with a CoSi2gate and a CaF2gate dielectric was produced. The room-temperature ultimate speed of this structure was estimated (and measured) at a level of 1.5–2 GHz for a supply voltage of 3.0 V.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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